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张勇辉

时间：2022-06-07 来源： 作者： 访问量：


张勇辉，男，生于1983年，教授，博士生导师。主要从事第三代半导体光电器件模拟仿真设计及器件工艺制备研究，重点研究光电器件外延结构设计，芯片器件表面重构及高效全反射镜设计相关的量子效率提升技术及相关的加工制备技术，同时开展了GaN基电力电子器件的设计和制备研究。先后承担国家自然科学基金2项，河北省和天津市自然基金项目等省级项目4项，并作为骨干人员参与科技部重点研发计划2项。已在Applied Physics Letters、Optics Express、Optics Letters、Journal of Applied Physics等国内外主流期刊发表SCI论文50余篇, 其中以第一作者/通讯作者发表文章20余篇，并被邀请为Optics Express, Applied Physics Express , Optics and Laser Technology等期刊审稿人。申请专利20多项，已获授权专利10多项。

教育及工作经历

2021-11-至今 电子科学与技术 教授

2018-01-2021.10 电子科学与技术 副教授

2015.9-2017.12 电子科学与技术系 讲师

2012.9-2015.7 中科院半导体研究所 博士

2007.9-2010.7 北京工业大学微电子与固体电子学 硕士

2003.9-2007.7 电子科学与技术 学士

所授课程：

  1. 电子科学与技术中的数值方法(研究生课程)

  2. 集成电路原理及设计（本科生课程）

  3. 绚丽多彩的LED世界（本科生选修课）

基金项目：

  1. 国家自然科学基金面上项目，具有全反射n电极的空腔型倾斜侧壁深紫外LED的研究, 61975051,59万，2020.01-2023.12 （主持）.

  2. 河北省自然科学基金面上项目，主持，无边缘pGaN的空腔型倾斜侧壁深紫外LED的研究，F2020202030，10万，2020.01-2022.12（主持）.

  3. 国家自然科学基金青年项目，主持，具有纳米球3D结构型微纳倾斜侧壁的深紫外LED的研究，61604051，20万，2017.01-2019.12（主持）.

  4. 天津市自然科学基金青年项目，主持，用于GaN基LED的双层纳米结构图形化蓝宝石衬底研究，16JCQNJC01000，6万，2016.04-2019.03（主持）.

  5. 河北省自然科学基金青年项目，主持，基于超薄圆台腔型蓝宝石纳米图形衬底的GaN-LED的研究，F2017202026，4万，2017.01-2019.12（主持）.

  6. 中国博士后科学基金，主持，中空型倾斜侧壁深紫外 LED 的研究，第62批， 2017M621046, 5万（主持）.

  7. 国家重点研发计划，参与，“第三代半导体固态紫外光源材料及器件关键技术”子课题项目"固态紫外光源量子应变体系结构设计与机理研究"，2016YFB0400801 （参与）

研究领域

第三代半导体光电器件、半导体器件物理、半导体器件模拟仿真及设计

论文情况：

[1] G. Zhang, H. Shao, M. Zhang, Z. Zhao, C. Chu, K. Tian, C. Fan, Y. Zhang, and Z. H. Zhang, "Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over-etched p-GaN layer at the top of truncated cones," Opt Express 29, 30532-30542 (2021).

[2] J. Zhang, L. Chang, Z. Zhao, K. Tian, C. Chu, Q. Zheng, Y. Zhang*, Q. Li, and Z.-H. Zhang, "Different scattering effect of nano-patterned sapphire substrate for TM- and TE-polarized light emitted from AlGaN-based deep ultraviolet light-emitting diodes," Optical Materials Express 11, 729 (2021).

[3] Y. Zheng, J. Zhang, L. Chang, C. Chu, K. Tian, Q. Zheng, Q. Li, Y. Zhang, W. Bi, and Z.-H. Zhang, "Understanding omni-directional reflectors and nominating more dielectric materials for deep ultraviolet light-emitting diodes with inclined sidewalls," Journal of Applied Physics 128, 093106 (2020).

[4] J. Zhang, L. Chang, Y. Zheng, C. Chu, K. Tian, C. Fan, Y. Zhang*, and Z. H. Zhang, "Integrating remote reflector and air cavity into inclined sidewalls to enhance the light extraction efficiency for AlGaN-based DUV LEDs," Optics Express 28, 17035-17046 (2020).

[5] D. Zhang, C. Chu, K. Tian, J. Kou, W. Bi, Y. Zhang*, and Z.-H. Zhang, "Improving hole injection from p-EBL down to the end of active region by simply playing with polarization effect for AlGaN based DUV light-emitting diodes," AIP Advances 10, 065032 (2020).

[6] H. Shao, J. Che, J. Kou, C. Chu, K. Tian, Y. Zhang*, W. Bi, and Z.-H. Zhang, "Advantage of SiO2 Intermediate Layer on the Electron Injection for Ti/n-Al0.60Ga0.40N Structure," IEEE Transactions on Electron Devices 67, 3548-3552 (2020).

[7] S. Hang, Y. Zhang*, Y. Gao, X. Qiu, J. Kou, K. Tian, and Z.-H. Zhang , "On the origin for the hole confinement into apertures for GaN-based VCSELs with buried dielectric insulators," Optics Express 28, 8668-8679 (2020).

[8] Y. Zheng, Y. Zhang*, J. Zhang, C. Sun, C. Chu, K. Tian, Z.-H. Zhang , and W. Bi, "Effects of Meshed p-type Contact Structure on the Light Extraction Effect for Deep Ultraviolet Flip-Chip Light-Emitting Diodes," Nanoscale Research Letters 14, 149 (2019).

[9] Y. Zhang, J. Zhang, Y. Zheng, C. Sun, K. Tian, C. Chu, Z.-H. Zhang, J. G. Liu, and W. Bi, "The Effect of Sapphire Substrates on Omni-Directional Reflector Design for Flip-Chip Near-Ultraviolet Light-Emitting Diodes," IEEE Photonics Journal 11, 1-9 (2019).

[10] K. Tian, C. Chu, W. Bi, Y. Zhang*, Z.-H. Zhang , "Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-EmittingDiodes," Laser & Optoelectronics Progress 56, 060001 (2019).

[11] R. Meng, X. Ji, Z. Lou, J. Yang, Y. Zhang*, Z.-H. Zhang, W. Bi, J. Wang, and T. Wei, "High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized beta-Ga2O3 layer," Optics Letters 44, 2197-2200 (2019).

[12] C. Chu, K. Tian, Y. Zhang*, W. Bi, and Z.-H. Zhang, "Progress in External Quantum Efficiency for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes," Physica Status Solidi (A) 216, 1800815 (2019).

[13] Y. Zhang, Y. Zheng, R. Meng, C. Sun, K. Tian, C. Geng, Z.-H. Zhang, G. Liu, and W. Bi, "Enhancing Both TM- and TE-Polarized Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diode via Air Cavity Extractor With Vertical Sidewall," IEEE Photonics Journal 10, 8200809 (2018).

[14] Y. Zhang, R. Meng, Z.-H. Zhang, Q. Shi, L. Li, G. Liu, and W. Bi, "Effects of Inclined Sidewall Structure With Bottom Metal Air Cavity on the Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes," IEEE Photonics Journal 9, 1600709 (2017).

[15] Y. Zhang, Z.-H. Zhang, C. Geng, S. Xu, T. Wei, and W. Bi, "Versatile nanosphere lithography technique combining multiple-exposure nanosphere lens lithography and nanosphere template lithography," Chinese Optics Letters 15, 062201-062205 (2017).

[16] Q. Shi, L. Li, Y. Zhang*, Z.-H. Zhang, and W Bi, "Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode," Acta Physica Sinica 66, 158501 (2017).

[17] Y. Zhang, T. Wei, Z. Xiong, L. Shang, Y. Tian, Y. Zhao, P. Zhou, J. Wang, and J. Li, "Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography," Applied Physics Letters 105, 013108 (2014).

[18] Y. Zhang, T. Wei, Z. Xiong, Y. Chen, A. Zhen, L. Shan, Y. Zhao, Q. Hu, J. Li, and J. Wang, "Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography," Journal of Applied Physics 116, 194301 (2014).

[19] Y. Zhang, T. Wei, J. Wang, D. Lan, Y. Chen, Q. Hu, H. Lu, and J. Li, "The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing," AIP Advances 4, 027123 (2014).

[20] Y. Zhang, T. Wei, J. Wang, C. Fan, Y. Chen, Q. Hu, and J. Li, "Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays," Journal of Crystal Growth 394, 7-10 (2014).

[21] Y. Zhang, W. Guo, W. Gao, W. Li, and T. Ding, "Properties of the ITO layer in a novel red light-emitting diode," Journal of Semiconductors 31, 043002 (2010).

[22] C. Chu, D. Zhang, H. Shao, J. Che, K. Tian, Y. Zhang*, and Z.-H. Zhang, " Reducing the polarization mismatch between last quantum barrier and p-EBL to enhance the carrier injection for AlGaN-based DUV LEDs," Optical Materials Express, in press, 2021.

[23] J. Che, H. Shao, L. Chang, J. Kou, K. Tian, C. Chu, Y. Zhang, W. Bi, and Z.-H. Zhang, "Doping-induced energy barriers to improve the current spreading effect for AlGaN-based ultraviolet-B light-emitting diodes," IEEE Electron Device Letters 41, 1001-1004 (2020).

[24] J. Che, H. Shao, J. Kou, K. Tian, C. Chu, X. Hou, Y. Zhang, Q. Sun, and Z.-H. Zhang, "Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes," Nanoscale Research Letters 14, 268 (2019).

[25] C. Chu, K. Tian, J. Che, H. Shao, J. Kou, Y. Zhang, Y. Li, M. Wang, Y. Zhu, and Z. -H. Zhang, "On the origin of enhanced hole injection for AlGaN-based deep ultraviolet light-emitting diodes with AlN insertion layer in p-electron blocking layer," Optics Express 27, A620-A628 (2019).

[26] C. Chu, K. Tian, J. Che, H. Shao, J. Kou, Y. Zhang, Z.-H. Zhang, and H.-C. Kuo, "On the Impact of Electron Leakage on the Efficiency Droop for AlGaN Based Deep Ultraviolet Light Emitting Diodes," IEEE Photonics Journal 12, 1600207 (2020).

[27] Y. Gao, Y. Zhang, C. Chu, S. Hang, X. Qiu, J. Kou, K. Tian, Z.-H. Zhang, and J. Zhou, "Effectively Confining the Lateral Current Within the Aperture for GaN Based VCSELs by Using a Reverse Biased NP Junction," IEEE Journal of Quantum Electronics 56, 2400507 (2020).

[28] X. Hou, X. Chen, X. Jia, Y. Liu, Y. Zhang, Z.-H. Zhang, and H.-C. Kuo, "Polarization Engineering to Manipulate the Breakdown Voltage for GaN‐Based PIN Diodes," Physica Status Solidi (A) 216, 1900210 (2019).

[29] X. Jia, S.-W. H. Chen, Y. Liu, X. Hou, Y. Zhang, Z.-H. Zhang, and H.-C. Kuo, "Design Strategies for Mesa-Type GaN-Based Schottky Barrier Diodes for Obtaining High Breakdown Voltage and Low Leakage Current," IEEE Transactions on Electron Devices 67, 1931-1938 (2020).

[30] J. Kou, S.-W. Huang Chen, J. Che, H. Shao, C. Chu, K. Tian, Y. Zhang, W. Bi, Z.-H. Zhang, and H.-C. Kuo, "On the Carrier Transport for InGaN/GaN Core-Shell Nanorod Green Light-Emitting Diodes," IEEE Transactions on Nanotechnology 18, 176-182 (2019).

[31] J. Kou, C. C. Shen, H. Shao, J. Che, X. Hou, C. Chu, K. Tian, Y. Zhang, Z. -H. Zhang, and H. C. Kuo, "Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes," Optics Express 27, A643-A653 (2019).

[32] J. Kou, K. Tian, C. Chu, Y. Zhang, X. Zhou, Z. Feng, and Z. -H. Zhang, "Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency," Nanoscale Research Letters 14, 396 (2019).

[33] X. Qiu, Y. Zhang, S. Hang, Y. Gao, J. Kou, K. Tian, Q. Zheng, Q. Li, and Z. -H. Zhang, "Enhancing the lateral current injection by modulating the doping type in the p-type hole injection layer for InGaN/GaN vertical cavity surface emitting lasers," Optics Express 28, 18035-18048 (2020).

[34] H. Shao, J. Che, J. Kou, C. Chu, K. Tian, Y. Zhang, W. Bi, and Z.-H. Zhang, "Metal-insulator-semiconductor structure for deep-ultraviolet light-emitting diodes to increase the electron injection in the cathode region," Superlattices and Microstructures 140, 106467 (2020).

[35] C. Sun, Y. Zhang, Y. Zheng, C. Chu, K. Tian, C. Fan, Z.-H. Zhang, and W. Bi, "The morphology evolution of selective area wet etched commercial patterned sapphire substrates," Journal of Micromechanics and Microengineering 29, 035012 (2019).

[36] K. Tian, C. Chu, J. Che, H. Shao, J. Kou, Y. Zhang, X. Zhou, Z. Feng, T. Wei, and Z.-H. Zhang, "Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission," Journal of Applied Physics 126, 245702 (2019).

[37] D. Zhang, C. Chu, K. Tian, J. Kou, W. Bi, Y. Zhang, and Z.-H. Zhang, "Improving hole injection from p-EBL down to the end of active region by simply playing with polarization effect for AlGaN based DUV light-emitting diodes," AIP Advances 10, 065032 (2020).

[38] Z.-H. Zhang, J. Kou, S.-W. H. Chen, H. Shao, J. Che, C. Chu, K. Tian, Y. Zhang, W. Bi, and H.-C. Kuo, "Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes," Photonics Research 7, B1-B6 (2019).

[39] W. Bi, S. Zhao, Y. Zhang, M. Fang, K. Tian, and C. Chu, "Structural design and optimization of deep-ultraviolet light-emitting diodes with AlxGa1−xN/AlyGa1−yN/AlxGa1−xN(x > y) p-electron blocking layer," Journal of Nanophotonics 12, 043503 (2018).

[40] J. Che, C. Chu, K. Tian, J. Kou, H. Shao, Y. Zhang, W. Bi, and Z. -H. Zhang, "On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes," Nanoscale Research Letters 13, 355 (2018).

[41] M. Fang, K. Tian, C. Chu, Y. Zhang, Z.-H. Zhang, and W. Bi, "Manipulation of Si Doping Concentration for Modification of the Electric Field and Carrier Injection for AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes," Crystals 8, 258 (2018).

[42] K. Tian, Q. Chen, C. Chu, M. Fang, L. Li, Y. Zhang, W. Bi, C. Chen, Z.-H. Zhang, and J. Dai, "Investigations on AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes With Si-Doped Quantum Barriers of Different Doping Concentrations," Physica Status Solidi (RRL) 12, 1700346 (2018).

[43] K. Tian, C. Chu, H. Shao, J. Che, J. Kou, M. Fang, Y. Zhang, W. Bi, and Z.-H. Zhang, "On the polarization effect of the p-EBL/p-AlGaN/p-GaN structure for AlGaN-based deep-ultraviolet light-emitting diodes," Superlattices and Microstructures 122, 280-285 (2018).

[44] Z.- H. Zhang, K. Tian, C. Chu, M. Fang, Y. Zhang, W. Bi, and H. C. Kuo, "Establishment of the relationship between the electron energy and the electron injection for AlGaN based ultraviolet light-emitting diodes," Optics Express 26, 17977-17987 (2018).

[45] Z.-H. Zhang, S.-W. Huang Chen, C. Chu, K. Tian, M. Fang, Y. Zhang, W. Bi, and H.-C. Kuo, "Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency," Nanoscale Research Letters 13, 122(2018).

[46] L. Li, Q. Shi, K. Tian, C. Chu, M. Fang, R. Meng, Y. Zhang, Z. -H. Zhang, and W. Bi, “A dielectric-constant-controlled tunnel junction for III-nitride light-emitting diodes,” Physica Status Solidi (A) 214, 6 (2017).

[47] X. Liu, Y. Liu, S. Xu, C. Geng, Y. Xie, Z. -H. Zhang, Y. Zhang, and W. Bi, “Formation of "Steady Size" State for Accurate Size Control of CdSe and CdS Quantum Dots,” Journal of Physical Chemistry Letters 8, 3576-3580 (2017).

[48] Z. Xiong, T. Wei, Y. Zhang, X. Zhang, C. Yang, Z. Liu, G. Yuan, J. Li, and J. Wang, “Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography,” Nanotechnology 28, 11(2017).

[49] Z. -H. Zhang, S. Chen, Y. Zhang, L. Li, S. Wang, K. Tian, C. Chu, M. Fang, H. Kuo, and W. Bi, “Hole Transport Manipulation To Improve the Hole Injection for Deep Ultraviolet Light-Emitting Diodes,” ACS Photonics 4, 1846-1850(2017).

[50] Z. -H. Zhang, L. Li, Y. Zhang, F. Xu, Q. Shi, B. Shen, and W. Bi, “On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes,” Optics Express 25 16550-16559( 2017).

[51] Y. Tian, J. Yan, Y. Zhang, Y. Zhang, X. Chen, Y. Guo, J. Wang, and J. Li, “Formation and characteristics of AlGaN-based three-dimensional hexagonal nanopyramid semi-polar multiple quantum wells,” Nanoscale, 8, 11012-11018(2016).

[52] Z. Xiong, T. Wei, Y. Zhang, J. Wang, and J. Li, “Multiple-exposure colloidal lithography for enhancing light output of GaN-based light-emitting diodes by patterning Ni/Au electrodes,” Optics Express 24, A44-A51(2016).

[53] Z. -H. Zhang, Y. Zhang, W. Bi, H. Demir, and X. Sun, “On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates,” Physica Status Solidi (A) 213, 3078-3102(2016).

[54] Z. -H. Zhang, Y Zhang, W. Bi, C. Geng, S. Xu, H. Demir, and X. Sun, “On the hole accelerator for III-nitride light-emitting diodes,” Applied Physics Letters 108, 15(2016).

[55] Z. -H. Zhang, Y. Zhang, W. Bi, C. Geng, S. Xu, H. Demir, and X. Sun, “A charge inverter for III-nitride light-emitting diodes,” Applied Physics Letters 108, 13(2016).

[56] Z. -H. Zhang, Y. Zhang, H. Li, S. Xu, C. Geng, and W. Bi, “On the Importance of the Polarity for GaN/InGaN Last Quantum Barriers in III-Nitride-Based Light-Emitting Diodes,” IEEE Photonics Journal 8, 8200307 (2016).

[57] L. Shan, T. Wei, Y. Sun, Y. Zhang, Z. Xiong, A. Zhen, J. Wang, Y. Wei, and J. Li, “Effect of layers of carbon-nanotube-patterned substrate on GaN-based light-emitting diodes,” Japanese Journal of Applied Physics 54, 065102 (2015).

[58] L. Shan, T. Wei, Y. Sun, Y. Zhang, A. Zhen, Z. Xiong, Y. Wei, G. Yuan, J. Wang, and J. Li, “Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodes,” Optics Express 23, A957-A965(2015).

[59] A. Zhen, P. Ma, Y. Zhang, E. Guo, Y. Tian, B. Liu, S. Guo, L. Shan, J. Wang, and J. Li, “Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode,” Applied Physics Letters 105, 251103 (2014).

参加会议情况：

[1] 第十五届全国MOCVD学术会议，江西井冈山，2017年， “空腔型倾斜侧壁深紫外LED的光提取理论分析研究”(口头报告)

[2] 第三届全国宽禁带半导体学术会议,陕西西安，2019年，报告题目“深紫外LED中反射镜的理论设计及研究” (口头报告)

[3] International Conference on Energy, Materials and Photonics 2019 (EMP19),Shanghai，“Enhancing the light extraction efficiency for ultraviolet LED through design of reflector”(邀请报告)

专利情况：

  1. 张勇辉，张紫辉，徐庶，耿翀，毕文刚，花中秋，一种深紫外半导体发光二极管及其制备方法，中国，CN201611009348.2，授权日：2018年08月17日。

  2. 张勇辉，毕文刚，张紫辉，徐庶，耿翀，具有双层微纳米结构阵列的图形化衬底的制作方法，中国，CN201510786400.4，授权日：2017年12月26日。

  3. 张勇辉，毕文刚，张紫辉，徐庶，耿翀，具有低折射率结构层的图形化衬底制作方法，中国，CN201510783423.X，授权日：2017年12月15日。

  4. 张勇辉，魏同波，王军喜，李晋闽，一种多功能组合型纳米图形制作方法，中国，201410658845.X，授权日：2016年08月24号。

  5. 张勇辉,张紫辉,毕文刚, 徐庶 ,耿翀,一种薄膜腔体型图形衬底及其制备方法,中国，CN201710315823.7，授权日：2019年02月22日。

  6. 张紫辉;张勇辉;毕文刚;徐庶;耿翀，一种氮化物发光二极管芯片的制备方法，CN201610257518.2，授权日：2018年03月30日。

  7. 张紫辉;张勇辉;毕文刚;徐庶;耿翀，具有电子能量调节层的发光二极管外延结构，CN201610257519.7，授权日：2018年05月11日。

  8. 张紫辉;张勇辉;毕文刚;徐庶;耿翀，一种LED的芯片结构及其制备方法，CN201610260335.6，授权日：2018年11月02日。

  9. 张紫辉;张勇辉;毕文刚;徐庶;耿翀，具有P-型欧姆接触层的发光二极管外延结构，CN201610257517.8，授权日：2019年05月31日。

  10. 张紫辉;张勇辉;毕文刚;徐庶;耿翀，具有空穴能量调节层的发光二极管外延结构，CN201610261242.5，授权日：2018年03月27日。

  11. 田康凯;楚春双;方梦倩;李路平;张勇辉;张紫辉，具有超晶格隧穿结的发光二极管外延结构及其制备方法，CN201710636642.4，授权日：2019年05月31日。

  12. 李路平;田康凯;楚春双;张勇辉;毕文刚;张紫辉，一种基于h-BN隧穿结为空穴注入层的发光二极管外延结构， CN201710636724.9，授权日：2019年07月09日。

  13. 张紫辉;寇建权;邵华;张勇辉;楚春双;田康凯，一种低阻LED的芯片外延结构及其制备方法，CN201810645931.5，申请中。

  14. 张紫辉;车佳漭;楚春双;张勇辉;田康凯，具有场板结构的发光二极管器件及其制备方法，CN201810734433.8，申请中。

  15. 张勇辉;郑羽欣;车佳漭;张紫辉，具有均匀电极电场分布的发光二极管及其制备方法，CN201811206247.3，申请中。

  16. 张勇辉;张际;张紫辉;郑羽欣，一种具有光散射结构和ODR的发光二极管及其制备方法，CN201811586130.2，申请中。

  17. 张紫辉;侯旭;张勇辉，一种PIN二极管器件结构及其制备方法，CN201910212187.4，申请中。

  18. 张紫辉;寇建权;张勇辉;周幸叶;冯志红，一种具有弧形增透作用的光电探测器结构及其制备方法，CN201910574152.5，申请中。

  19. 张勇辉;杭升;张紫辉，具有高介电常数电流限制孔的VCSEL器件及其制备方法，CN201910640780.9，申请中。

  20. 张紫辉;刘亚津;张勇辉;贾兴宇，一种GaN基PIN二极管器件结构及其制备方法，CN201910870538.0，申请中。

  21. 张紫辉;高元斌;张勇辉，具有N-型半导体限制孔结构的VCSEL器件，CN201910930389.2，申请中。

  22. 张紫辉;高元斌;张勇辉，具有N型耗尽层结构的VCSEL器件的制作方法，CN201910930389.2，申请中。

  23. 张紫辉；杭升；李青；郑权；张勇辉，具有梯形侧壁场板肖特基二极管的AC Micro-LED 阵列，CN202010154518.6，申请中。

  24. 黄福平；张勇辉；张紫辉，一种具有倾斜侧壁场板的倒梯形栅MOSFET器件结构，CN202010282871.2，申请中。

  25. 张紫辉；王佳幸；张勇辉，一种基于极化效应的AlGaN-MSM探测器结构及其制备方法，CN202010424746.0，申请中。

  26. 张紫辉；张丹扬；张勇辉，一种同时具有SBD和DUV LED结构的集成光电子芯片及其制备方法，CN2020110750824.6，申请中。

  27. 张勇辉；常乐；张紫辉，一种边缘无pGaN的深紫外半导体发光二极管及其制备方法，CN202011071064.2，申请中。

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